Pages: 415-421

Authors: Milić M. Pejović

Abstract

The gamma-ray irradiation sensitivity to radiation dose range from 0.5 Gy to 5 Gy and post-irradiation annealing at room and elevated temperatures have been studied for p-channel metal-oxide-semiconductor field effect transistors (also known as radiation sensitive field effect transistors or  pMOS  dosimeters) with gate oxide thicknesses of 400 nm and 1 µm. The gate biases during the irradiation were 0 and 5 V and 5 V during the annealing. The radiation and the post-irradiation sensitivity were followed by measuring the threshold voltage shift, which was determined by using transfer characteristics in saturation and reader circuit characteristics. The dependence of threshold voltage shift ?V_T on absorbed radiation dose D and annealing time was assessed. The results show that there is a linear dependence between ?V_T and D during irradiation, so that the sensitivity can be defined as ?V_T/D for the investigated dose interval. The annealing of irradiated metal-oxide-semiconductor field effect transistors at different temperatures ranging from room temperature up to 150 °C was performed to monitor the dosimetric information loss. The results indicated that the dosimeters information is saved up to 600 hours at room temperature, whereas the annealing at 150 °C leads to the complete loss of dosimetric information in the same period of time. The mechanisms responsible for the threshold voltage shift during the irradiation and the later annealing have been discussed also.

Key words: RADFET, absorbed radiation dose, gamma irradiation, threshold voltage, annealing

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