NT & RP Journal
RELIABILITY OF COMPUTER MEMORIES IN RADIATION ENVIRONMENT
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Vol. XXXI, No. 3, Pp. 197-305
September 2016
UDC 621.039+614.876:504.06
ISSN 1451-3994

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Pages: 240-246

Authors:
Irfan S. Fetahović, Edin Ć. Dolićanin, Boris B. Lončar, and Nenad M. Kartalović

Abstract

The aim of this paper is examining a radiation hardness of the magnetic (Toshiba MK4007 GAL) and semiconductor (AT 27C010 EPROM and AT 28C010 EEPROM) computer memories in the field of radiation. Magnetic memories have been examined in the field of neutron radiation, and semiconductor memories in the field of gamma radiation. The obtained results have shown a high radiation hardness of magnetic memories. On the other side, it has been shown that semiconductor memories are significantly more sensitive and a radiation can lead to an important damage of their functionality.

Key words: magnetic memory, semiconductor memory, radioactive reliability, gamma radiation, neutron radiation

FULL PAPER IN PDF FORMAT (770 KB)

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